| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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31,420 pcs
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31420 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The IRFS4127TRLPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications, offering a drain-to-source voltage of 200V and a continuous drain current of 72A at 25°C. The device features a maximum on-resistance of 22mOhm at 44A and 10V gate drive, with a typical value of 18.6mOhm, enabling low conduction losses.
This MOSFET is optimized for high-speed switching and hard-switched circuits, with a total gate charge of 150nC and input capacitance of 5380pF. It is rated for a maximum power dissipation of 375W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. The device also offers enhanced avalanche ruggedness with a single-pulse avalanche energy rating of 250mJ.
The IRFS4127TRLPBF is available in a TO-263-3 (D2PAK) surface-mount package, suitable for automated assembly. It is lead-free and RoHS compliant, making it suitable for environmentally conscious designs. The device is well-suited for applications such as high-efficiency synchronous rectification in switch-mode power supplies, uninterruptible power supplies, and high-speed power switching circuits.
The drain-to-source voltage (Vdss) is 200V.
The maximum continuous drain current is 72A at Tc=25°C with Vgs=10V.
The maximum on-resistance is 22mOhm at Id=44A and Vgs=10V. The typical value is 18.6mOhm.
The operating junction temperature range is -55°C to 175°C.
Yes, the part is lead-free and RoHS compliant.
The package is TO-263-3 (D2Pak) with 2 leads and a tab, surface mount.
The maximum power dissipation is 375W at Tc=25°C.