| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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210 pcs
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210 pcs | On Request | 1 | On Request | On Request | 1043 | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFS4115PBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-efficiency power switching applications, offering a maximum drain-to-source voltage of 150V and a package-limited continuous drain current of 195A at 25°C. The silicon-limited drain current is 99A at 25°C and 70A at 100°C, with a maximum on-resistance of 12.1mΩ at a gate drive of 10V.
This MOSFET features a typical input capacitance of 5270pF and a maximum gate charge of 120nC, making it suitable for high-speed switching circuits. It can dissipate up to 375W of power at a case temperature of 25°C, with a junction-to-case thermal resistance of 0.4°C/W. The device operates over a junction temperature range of -55°C to 175°C.
The IRFS4115PBF is housed in a TO-263-3 (D2PAK) surface-mount package, which is well-suited for automated assembly and space-constrained designs. It is lead-free and RoHS3 compliant, supporting environmentally conscious manufacturing. Typical applications include synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching circuits.
The maximum drain-to-source voltage (Vdss) is 150V.
The package-limited continuous drain current is 195A at Tc=25°C with VGS=10V. The silicon-limited current is 99A at 25°C and 70A at 100°C.
The maximum on-resistance is 12.1mΩ at Id=62A and VGS=10V, with a typical value of 10.3mΩ.
The operating junction temperature range is -55°C to 175°C.
The IRFS4115PBF is available in a TO-263-3 (D2PAK) surface-mount package.
The IRFS4115PBF is listed as RoHS3 compliant and lead-free, though this compliance data is unverified and should be confirmed with official documentation.
The maximum power dissipation is 375W at Tc=25°C.