| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,667 pcs
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3667 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS4010TRLPBF is an N-Channel enhancement mode power MOSFET manufactured by Infineon Technologies. It utilizes advanced HEXFET technology to provide low on-resistance and high switching performance. The device is rated for a drain-source voltage (Vdss) of 100V and can handle a continuous drain current of 180A at 25°C case temperature. The maximum on-resistance is 4.7mΩ when driven with a 10V gate-source voltage, with a typical value of 3.9mΩ.
This MOSFET is designed for high efficiency power conversion applications. It features a total gate charge of 215 nC at 10V and an input capacitance of 9575 pF at 50V drain-source voltage, making it suitable for high-speed switching. The device is capable of dissipating up to 375W of power at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C.
The IRFS4010TRLPBF is offered in a D2PAK (TO-263) surface mount package, which is suitable for automated assembly processes. The package is lead-free and RoHS compliant (unverified). The supplier device package is D2PAK.
100V.
180A at 25°C case temperature.
Maximum 4.7mΩ at 10V gate voltage.
D2PAK (TO-263) surface mount.
-55°C to 175°C (junction).
RoHS3 compliant (unverified).
215 nC at 10V.