IRFS4010PBF IRFS4010PBF is an N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 180A continuous drain current. It features a low on-resistance of 4.7mOhm and is housed in a D2PAK surface-mount package.
Mfr Part #:

IRFS4010PBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRFS4010PBF is an N-Channel MOSFET from Infineon Technologies with 100V drain-source voltage and 180A continuous drain current. It features a low on-resistance of 4.7mOhm and is housed in a D2PAK surface-mount package.
✓ Total Stock: 95 pcs

IRFS4010PBF Available from 1 distributor

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IRFS4010PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFS4010PBF Description

Short technical summary and product information.

The IRFS4010PBF is an N-Channel power MOSFET from Infineon Technologies, designed for high-efficiency power switching applications. It features a drain-source voltage rating of 100V and a continuous drain current of 180A at 25°C case temperature. The device offers a maximum on-resistance of 4.7mOhm at 10V gate drive, with a typical value of 3.9mOhm.

 

This MOSFET utilizes advanced HEXFET technology, providing improved gate, avalanche, and dynamic dV/dt ruggedness. It has a maximum gate threshold voltage of 4V at 250µA drain current and a total gate charge of 215nC at 10V. The input capacitance is 9575pF at 50V drain-source voltage. The device can dissipate up to 375W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C.

 

The IRFS4010PBF is supplied in a D2PAK (TO-263) surface-mount package, which is suitable for automated assembly. It is RoHS3 compliant and has a moisture sensitivity level of 1 (unlimited). Typical applications include high-efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, high-speed power switching, and hard-switched high-frequency circuits.

IRFS4010PBF Quick Information

Product Type: MOSFET
Canonical Name: IRFS4010PBF - N-Channel MOSFET, 100V, 180A, D2PAK
Subcategory: N-Channel Power MOSFET

IRFS4010PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFS4010PBF Features

  • N-Channel MOSFET with 100V drain-source voltage.
  • Continuous drain current rating of 180A at 25°C.
  • Low on-resistance of 4.7mOhm maximum at 10V gate drive.
  • Surface-mount D2PAK package for automated assembly.
  • RoHS3 compliant and MSL level 1 unlimited.

IRFS4010PBF Applications

  • High efficiency synchronous rectification in SMPS.
  • Uninterruptible power supply (UPS) systems.
  • High speed power switching circuits.
  • Hard switched and high frequency power converters.

IRFS4010PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFS4010PBF?

The drain-source voltage (Vdss) is 100V.

What is the continuous drain current rating?

The continuous drain current (Id) is 180A at 25°C case temperature.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds(on)) is 4.7mOhm at Id=106A and Vgs=10V.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What package is the IRFS4010PBF available in?

It is available in a D2PAK (TO-263-3) surface-mount package.

Is the IRFS4010PBF RoHS compliant?

Yes, it is listed as RoHS3 compliant.

What is the gate threshold voltage?

The maximum gate threshold voltage (Vgs(th)) is 4V at Id=250µA.

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