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IRFS38N20DTRLP IRFS38N20DTRLP is an N-Channel HEXFET power MOSFET from Infineon Technologies. It features a 200V drain-source voltage, 43A continuous drain current, and 54mOhm on-resistance in a D2PAK surface-mount package.
Mfr Part #:

IRFS38N20DTRLP

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRFS38N20DTRLP is an N-Channel HEXFET power MOSFET from Infineon Technologies. It features a 200V drain-source voltage, 43A continuous drain current, and 54mOhm on-resistance in a D2PAK surface-mount package.
✓ Total Stock: 3,314 pcs

IRFS38N20DTRLP Available from 1 distributor

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✓ Non-Authorised
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Xingangxin ✓
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3,314 pcs
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IRFS38N20DTRLP Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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IRFS38N20DTRLP Description

Short technical summary and product information.

The IRFS38N20DTRLP is an N-Channel enhancement-mode power MOSFET built with Infineon's HEXFET technology. It is designed for high-efficiency power conversion applications.

 

Key electrical specifications include a drain-source voltage (Vdss) of 200V, continuous drain current of 43A at 25°C case temperature, and a maximum on-resistance of 54mOhm at Vgs=10V. The device is rated for a maximum power dissipation of 300W at Tc=25°C and operates over a junction temperature range of -55°C to 175°C.

 

The MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly. It is available in tape and reel packaging with a standard quantity of 800 pieces per reel.

IRFS38N20DTRLP Quick Information

Product Type: MOSFET
Canonical Name: IRFS38N20DTRLP
Subcategory: Single MOSFETs

IRFS38N20DTRLP Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFS38N20DTRLP Features

  • N-Channel HEXFET power MOSFET technology.
  • 200V drain-source voltage rating.
  • 43A continuous drain current at 25°C.
  • 54mOhm maximum on-resistance at 10V.
  • Surface-mount D2PAK (TO-263) package.

IRFS38N20DTRLP Applications

  • High frequency DC-DC converter circuits.
  • Power management in industrial systems.
  • Motor control and power switching.
  • Plasma display panel power supplies.

IRFS38N20DTRLP FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFS38N20DTRLP?

The drain-source voltage (Vdss) is 200V.

What is the maximum continuous drain current?

The continuous drain current is 43A at Tc=25°C and 30A at Tc=100°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 54mOhm at Vgs=10V and Id=26A.

What package is the IRFS38N20DTRLP available in?

It is available in a D2PAK (TO-263) surface-mount package.

What is the operating junction temperature range?

The operating junction temperature range is -55°C to 175°C.

Is the IRFS38N20DTRLP RoHS compliant?

The part is listed as RoHS3 compliant, but this information is unverified.

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