| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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99 pcs
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99 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Infineon Technologies IRFS38N20DPbF is a high-performance N-channel Power MOSFET. It features a maximum drain-to-source voltage (Vds) of 200V and a low static drain-to-source on-resistance (Rds(on)) of 54mΩ at a gate-to-source voltage (Vgs) of 10V and a drain current (Id) of 26A.
With a continuous drain current rating of 43A at 25°C case temperature and 30A at 100°C, this MOSFET is suitable for demanding applications. The maximum power dissipation is rated at 300W at 25°C case temperature. The operating junction temperature range is -55°C to +175°C.
Packaged in a D2-Pak surface-mount case, the IRFS38N20DPbF is designed for efficient thermal management. Its key benefits include low gate-to-drain charge to reduce switching losses and fully characterized capacitance, simplifying design. It is also fully characterized for avalanche voltage and current.
This MOSFET is well-suited for applications such as high-frequency DC-DC converters and plasma display panels.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-to-source breakdown voltage is 200 V at Vgs = 0V and Id = 250µA.
Continuous drain current is 43 A at Tc = 25°C and 30 A at Tc = 100°C with Vgs = 10V. Pulsed drain current is 180 A.
Maximum RDS(on) is 54 mΩ at Vgs = 10V and Id = 26A.
Gate threshold voltage is 3.0 V to 5.0 V at Vds = Vgs and Id = 250µA.
Maximum gate-source voltage is ±30 V.
It is supplied in a D2-Pak surface-mount package, with tape and reel packaging and a reel quantity of 800 pieces.
Maximum operating junction temperature is 175°C; storage temperature range is -55°C to +175°C.