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99 pcs
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99 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IRFS38N20DPbF is a high-performance N-channel Power MOSFET from the HEXFET family. It is designed for applications requiring efficient power switching, such as high frequency DC-DC converters and Plasma Display Panels.
Key electrical characteristics include a maximum drain-to-source breakdown voltage of 200V and a low static drain-to-source on-resistance of 54mΩ at 10V gate-to-source voltage and 26A drain current. The continuous drain current is rated at 43A at 25°C case temperature and 30A at 100°C case temperature.
This MOSFET operates within a junction temperature range of -55°C to +175°C. It is available in the D2-Pak surface mount package, facilitating integration into compact designs. The low gate-to-drain charge contributes to reduced switching losses, making it suitable for demanding power applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source breakdown voltage is 200V.
The maximum static drain-to-source on-resistance is 54mΩ at 10V gate-to-source voltage and 26A drain current.
The continuous drain current is 43A at 25°C case temperature and 30A at 100°C case temperature.
The operating junction and storage temperature range is -55°C to +175°C.
The IRFS38N20DPbF is available in the D2-Pak package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.