| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS38N20DPBF is a HEXFET power MOSFET from Infineon Technologies. It is an N-Channel enhancement-mode MOSFET designed for high-frequency DC-DC converters and plasma display panel applications. The device features a drain-to-source breakdown voltage of 200V (minimum) and a continuous drain current of 43A at 25°C case temperature.
The MOSFET offers a low on-resistance of 54mΩ maximum at VGS=10V, ID=26A, which minimizes conduction losses. The gate threshold voltage is between 3V and 5V. The device is capable of high switching speeds due to a gate charge of 91nC maximum at VGS=10V and input capacitance of 2900pF typical at VDS=25V.
The IRFS38N20DPBF is packaged in a D2PAK (TO-263) surface mount package, which is suitable for automated assembly. The package is lead-free according to the datasheet. The device operates over a junction temperature range of -55°C to 175°C, with a maximum power dissipation of 300W at case temperature 25°C.
The minimum drain-to-source breakdown voltage is 200V.
The IRFS38N20DPBF is available in a D2PAK (TO-263-3) surface mount package.
The operating junction temperature range is -55°C to 175°C.
The part is listed as RoHS3 compliant (unverified) and the datasheet indicates lead-free construction.
The maximum on-resistance is 54mΩ at VGS=10V and ID=26A.
The maximum gate charge is 91nC at VGS=10V.