| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS33N15DTRLP is a single N-channel power MOSFET manufactured by Infineon Technologies. It features a drain-source breakdown voltage of 150V and can handle continuous drain current up to 33A at 25°C case temperature (24A at 100°C). The device has a maximum drain-source on-resistance of 56mΩ at 10V gate drive and 20A drain current. Gate threshold voltage is 5.5V max at 250µA. Total gate charge is 90nC (max) at 10V. Input capacitance is 2020pF typical at 25V drain-source bias. The MOSFET is designed for high-frequency switching applications such as telecom 48V input active clamp forward converters and DC-DC converters. It is offered in a D2PAK (TO-263-3) surface mount package and can operate over a junction temperature range of -55°C to 175°C. Maximum power dissipation is 3.8W at ambient temperature and 170W at case temperature.
150V maximum.
TO-263-3 (D2Pak) surface mount package.
-55°C to 175°C junction temperature.
RoHS3 compliant (unverified).
33A at Tc=25°C, Vgs=10V; 24A at Tc=100°C.
5.5V maximum at Id=250µA.
56mΩ maximum at Id=20A, Vgs=10V.