IRFS33N15D N-Channel MOSFET with 150V drain-source breakdown voltage and 33A continuous drain current. Features low on-resistance of 56mΩ and is housed in a D2PAK surface mount package.
Mfr Part #:

IRFS33N15D

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel MOSFET with 150V drain-source breakdown voltage and 33A continuous drain current. Features low on-resistance of 56mΩ and is housed in a D2PAK surface mount package.
✓ Total Stock: 8,745 pcs

IRFS33N15D Available from 1 distributor

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IRFS33N15D Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFS33N15D Description

Short technical summary and product information.

The IRFS33N15D is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency DC-DC converters and telecom applications. Key electrical specifications include a drain-source breakdown voltage of 150V, continuous drain current of 33A at 25°C case temperature, and a maximum on-resistance of 56mΩ at VGS=10V.

 

The device features low gate charge (total gate charge 90nC max) and fully characterized capacitances including effective output capacitance (Coss eff.) of 320pF, which simplifies design in resonant topologies. Switching times are fast with typical turn-on delay of 13ns and rise time of 38ns. The MOSFET also offers robust avalanche capability with single pulse avalanche energy rating of 330mJ.

 

The IRFS33N15D is offered in a D2PAK (TO-263) surface mount package, suitable for automated assembly. It has an operating junction temperature range of -55°C to 175°C and a maximum power dissipation of 170W at case temperature 25°C. The device is RoHS compliant and has a moisture sensitivity level of 1 (unlimited). It is ideal for applications such as active clamp forward converters and high frequency DC-DC converters.

IRFS33N15D Quick Information

Product Type: N-Channel MOSFET
Canonical Name: IRFS33N15D N-Channel MOSFET
Subcategory: N-Channel MOSFET

IRFS33N15D Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFS33N15D Features

  • 150V drain-source breakdown voltage.
  • 33A continuous drain current rating.
  • Low on-resistance of 56 milliohms.
  • Fast switching with 13ns turn-on delay.
  • Surface mount D2PAK package.

IRFS33N15D Applications

  • Used in telecom 48V input converters.
  • Ideal for active clamp forward converters.
  • Suitable for high frequency DC-DC converters.
  • Designed for SMPS topologies.

IRFS33N15D FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the IRFS33N15D?

150V.

What is the continuous drain current rating?

33A at 25°C case temperature.

What is the on-resistance?

56mΩ maximum at VGS=10V, ID=20A.

What package is the IRFS33N15D available in?

D2PAK (TO-263) surface mount.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IRFS33N15D RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the total gate charge?

90nC maximum at VGS=10V.

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