| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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8,745 pcs
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8745 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS33N15D is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It is designed for high-frequency DC-DC converters and telecom applications. Key electrical specifications include a drain-source breakdown voltage of 150V, continuous drain current of 33A at 25°C case temperature, and a maximum on-resistance of 56mΩ at VGS=10V.
The device features low gate charge (total gate charge 90nC max) and fully characterized capacitances including effective output capacitance (Coss eff.) of 320pF, which simplifies design in resonant topologies. Switching times are fast with typical turn-on delay of 13ns and rise time of 38ns. The MOSFET also offers robust avalanche capability with single pulse avalanche energy rating of 330mJ.
The IRFS33N15D is offered in a D2PAK (TO-263) surface mount package, suitable for automated assembly. It has an operating junction temperature range of -55°C to 175°C and a maximum power dissipation of 170W at case temperature 25°C. The device is RoHS compliant and has a moisture sensitivity level of 1 (unlimited). It is ideal for applications such as active clamp forward converters and high frequency DC-DC converters.
150V.
33A at 25°C case temperature.
56mΩ maximum at VGS=10V, ID=20A.
D2PAK (TO-263) surface mount.
-55°C to 175°C junction temperature.
Yes, RoHS3 compliant (unverified).
90nC maximum at VGS=10V.