| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFS3307ZPBF from Infineon Technologies is a HEXFET Power MOSFET designed for high-speed power switching applications. It features a drain-source voltage (Vds) of 75V and a low on-resistance (Rds(on)) of 4.6mOhm typical at 10V gate-source voltage.
This MOSFET is characterized by its improved gate, avalanche, and dynamic dv/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability. It is suitable for applications such as high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and hard-switched or high-frequency circuits.
The device has a continuous drain current (Id) of up to 128A (silicon limited) at 25°C and 90A at 100°C. It is available in a D2Pak surface-mount package, facilitating integration into compact designs.
Key electrical parameters include a maximum power dissipation of 230W at 25°C and a gate-to-source voltage range of ±20V. The operating junction and storage temperature range is -55°C to +175°C. Thermal resistance from junction-to-case is 0.65°C/W, and junction-to-ambient is 40°C/W when mounted on a PCB.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the IRFS3307ZPBF is 75V.
The typical on-resistance (Rds(on)) of the IRFS3307ZPBF is 4.6mOhm at a gate-source voltage of 10V and a drain current of 75A.
The continuous drain current (Id) for the IRFS3307ZPBF is rated at 128A at 25°C (silicon limited) and 90A at 100°C (silicon limited).
The operating junction and storage temperature range for the IRFS3307ZPBF is -55°C to +175°C.
The IRFS3307ZPBF is available in a D2Pak package.