| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFS3307TRLPBF is an N-Channel power MOSFET from Infineon's HEXFET family, designed for high efficiency and ruggedness in demanding switching applications.
It delivers a drain-source voltage (Vdss) of 75V and a continuous drain current of 120A at 25°C (84A at 100°C). Its typical on-resistance is 5.0 mΩ (max 6.3 mΩ at 10V gate drive), ensuring low conduction losses. The device supports a maximum gate charge of 180 nC and input capacitance of 5150 pF, enabling high-speed switching.
The part is surface-mount in a D2PAK (TO-263) package, suitable for automated assembly. It is rated for junction temperatures from -55°C to 175°C and a maximum power dissipation of 200W. The datasheet also notes enhanced body diode dV/dt and dI/dt capability, and fully characterized avalanche SOA.
The maximum drain-source voltage (Vdss) is 75V.
The continuous drain current (Id) at Tc=25°C is 120A.
The maximum Rds(on) is 6.3 mΩ at Id=75A and Vgs=10V; typical is 5.0 mΩ.
The operating junction temperature range is -55°C to 175°C.
It is available in a surface-mount D2PAK (TO-263-3) package.
RoHS status is listed as RoHS3 Compliant but is unverified. The datasheet indicates Lead-Free.