| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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800 pcs
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800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFS3306TRLPBF is an N-channel power MOSFET from Infineon Technologies designed for high efficiency power conversion applications. It features a drain-source voltage (Vdss) of 60V and a continuous drain current of up to 160A (silicon limited) or 120A (package limited) at 25°C case temperature. The device offers a low typical on-resistance of 3.3 mOhm (maximum 4.2 mOhm at 75A, 10V) which minimizes conduction losses.
Key electrical characteristics include a gate threshold voltage of 4V maximum, total gate charge of 120 nC at 10V, and input capacitance of 4520 pF at 50V. The MOSFET is capable of handling pulsed drain currents up to 620A and single pulse avalanche energy up to 300 mJ. The body diode supports a peak recovery dv/dt of 1.5 V/ns.
Thermally, the device has a maximum power dissipation of 230W at 25°C case temperature, with a junction-to-case thermal resistance of 0.65°C/W and junction-to-ambient thermal resistance of 40°C/W (PCB mounted on D2Pak). The operating junction temperature range is -55°C to 175°C.
The IRFS3306TRLPBF is supplied in a D2PAK (TO-263-3) surface mount package, which is suitable for automated assembly and provides efficient heat transfer to the PCB. It is RoHS3 compliant, lead-free, and halogen-free. Typical applications include high efficiency synchronous rectification in SMPS, uninterruptible power supplies, high speed power switching, and hard switched/high frequency circuits.
The drain-source voltage (Vdss) is 60V.
It is available in the D2PAK (TO-263-3) surface mount package.
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant, lead-free, and halogen-free per the datasheet.
The continuous drain current is 160A silicon limited and 120A package limited at Tc=25°C.
The maximum gate threshold voltage is 4V at Id=150µA.
The typical on-resistance is 3.3 mOhm at Vgs=10V, with a maximum of 4.2 mOhm at Id=75A, Vgs=10V.