| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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257 pcs
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257 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IRFS3207PBF is a high-performance N-Channel power MOSFET manufactured using advanced HEXFET technology. This device offers a drain-to-source voltage (Vdss) of 75V and a continuous drain current of 170A at Tc=100°C, with a package limitation of 75A.
Key electrical characteristics include a typical drain-source on-resistance of 3.6 mOhm and a maximum of 4.5 mOhm at 75A and 10V gate drive. The gate threshold voltage ranges from 2V to 4V, and the maximum gate charge is 260 nC at 10V. Input capacitance is specified at 7600 pF at Vds=50V.
The MOSFET is designed for high efficiency synchronous rectification in switch-mode power supplies (SMPS), uninterruptible power supplies, and high-speed power switching applications. It is housed in a TO-263-3 (D2Pak) surface mount package with a D2PAK supplier device package and is lead-free and RoHS3 compliant.
The drain-source breakdown voltage (Vdss) is 75V.
The maximum continuous drain current is 170A at Tc=100°C.
The IRFS3207PBF is available in a surface mount D2PAK (TO-263-3) package.
The operating junction temperature range is -55°C to +175°C.
Yes, this part is RoHS3 Compliant and lead-free.
The maximum drain-source on-resistance is 4.5 mOhm at Id=75A and Vgs=10V.