| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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24,800 pcs
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24800 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
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3,420 pcs
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3420 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,096 pcs
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1096 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFS3206TRRPBF is an N-Channel HEXFET power MOSFET from Infineon Technologies. It features a drain-source voltage of 60V and a continuous drain current of 120A (package limited) or 210A (silicon limited).
With a typical on-resistance of 2.4mOhm and maximum 3.0mOhm at Vgs=10V, it offers high efficiency in low-voltage applications. The gate charge is 170nC maximum, and input capacitance is 6540pF maximum, enabling fast switching.
This MOSFET is housed in a D2PAK (TO-263) surface mount package, with an operating junction temperature range of -55°C to 175°C. It is RoHS3 compliant, lead-free, and halogen-free.
Typical applications include high efficiency synchronous rectification in SMPS, uninterruptible power supplies, high speed power switching, and hard switched circuits.
The maximum drain-source voltage is 60V.
The package is TO-263-3, D²Pak (2 Leads + Tab), TO-263AB (also known as D2PAK).
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant, lead-free, and halogen-free.
The maximum on-resistance is 3.0mOhm at Id=75A, Vgs=10V; typical is 2.4mOhm.
The maximum gate charge is 170nC at Vgs=10V.
The maximum input capacitance (Ciss) is 6540pF at Vds=50V.