| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
87 pcs
|
87 pcs | On Request | 1 | On Request | On Request | 1101 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFS3206PBF is an N-Channel power MOSFET from Infineon Technologies' HEXFET family. It is designed for high-efficiency synchronous rectification in switched-mode power supplies and other high-speed switching applications. The device features a drain-to-source voltage rating of 60V and a continuous drain current of 120A (package limited) at 25°C case temperature, with a silicon-limited current of 210A. The typical on-resistance is 2.4mOhm with a maximum of 3mOhm at 75A and 10V gate drive. The gate threshold voltage is 4V maximum at 150µA drain current. The device offers a maximum power dissipation of 300W at 25°C case temperature and operates over a junction temperature range of -55°C to 175°C. The gate charge is 170nC at 10V, and input capacitance is 6540pF at 50V drain-source voltage. The MOSFET is housed in a D2PAK (TO-263) surface-mount package, suitable for automated assembly. It is RoHS compliant, lead-free, and halogen-free per the datasheet. The device is also available in TO-220AB (IRFB3206PbF) and TO-262 (IRFSL3206PbF) package variants.
60V.
120A at 25°C case temperature (package limited), silicon limited to 210A.
3mOhm max at 75A, 10V gate drive; typical 2.4mOhm.
-55°C to 175°C junction temperature.
D2PAK (TO-263) surface mount.
Yes, RoHS3 compliant per datasheet (unverified).
4V maximum at 150µA drain current.