| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16 pcs
|
16 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3 pcs
|
3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Vgs(th) (Max) @ Id |
This Infineon IRFS31N20DTRLP is a high-performance N-Channel MOSFET designed for various power applications. It features a maximum drain-to-source voltage (Vdss) of 200V and a continuous drain current (Id) of 31A at 25°C.
The MOSFET offers a maximum on-resistance (Rds On) of 82mOhm at 18A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 5.5V at 250µA, and the maximum gate-to-source voltage is ±30V. Input capacitance (Ciss) is rated at a maximum of 2370pF at 25V.
With a maximum power dissipation of 3.1W at ambient temperature and 200W at case temperature, this device operates within a junction temperature range of -55°C to 175°C. It is housed in a surface-mount D2PAK package (TO-263-3, D²Pak).
This component is suitable for applications requiring robust switching performance and high current handling capabilities within a compact surface-mount form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
200V.
31A at 25°C.
82mOhm maximum at 18A, 10V.
5.5V maximum at 250µA.
107nC maximum at 10V.
-55°C to 175°C.
D2PAK (TO-263-3).