| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,600 pcs
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5600 pcs | On Request | 1 | On Request | On Request | 21+12+ | On Request | On Request |
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The IRFS3107TRLPBF is an N-Channel power MOSFET from Infineon Technologies, designed for high efficiency power switching applications. It features a maximum drain-source voltage of 75V and a continuous drain current of 195A (package limited) or 230A (silicon limited) at 25°C with a 10V gate drive. The device boasts a low on-resistance of 3 mOhm maximum (2.5 mOhm typical) at 140A, enabling minimal conduction losses. With a gate charge of 240 nC and input capacitance of 9370 pF, it offers fast switching characteristics suitable for hard-switched and high-frequency circuits.
The MOSFET is housed in a D2PAK (TO-263) surface mount package, providing excellent thermal performance with a junction-to-case thermal resistance of 0.4°C/W and maximum power dissipation of 370W. It operates over a junction temperature range of -55°C to 175°C. The device is fully characterized for capacitance and avalanche SOA, and features enhanced body diode dV/dt and dI/dt capability.
Applications include high efficiency synchronous rectification in switched-mode power supplies (SMPS), uninterruptible power supplies (UPS), and high speed power switching circuits. The part is lead-free and compatible with RoHS requirements (unverified).
75V maximum.
195A (package limited) or 230A (silicon limited) at 25°C with 10V gate drive.
-55°C to 175°C junction temperature.
D2PAK (TO-263-3, D²Pak).
The part is marked as RoHS3 Compliant but this is unverified. The datasheet confirms lead-free.
2.5 mOhm typical at 140A, 10V.
370W at case temperature 25°C.