| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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33 pcs
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33 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Infineon IRFS3107-7PPBF is a HEXFET Power MOSFET featuring a 75V drain-to-source breakdown voltage and a low on-resistance of 2.1mΩ typical. It offers a continuous drain current of 260A at 25°C case temperature and 190A at 100°C.
This MOSFET is characterized by improved gate, avalanche, and dynamic dV/dt ruggedness, along with enhanced body diode dV/dt and dI/dt capability. It is suitable for applications such as high-efficiency synchronous rectification in SMPS, uninterruptible power supplies, and high-speed power switching circuits.
The device operates within a junction and storage temperature range of -55°C to +175°C. It is available in a through-hole package with a junction-to-case thermal resistance of 0.40°C/W.
Key electrical parameters include a maximum power dissipation of 320W at 25°C and a gate-to-source voltage range of ±20V. The part also features a single pulse avalanche energy rating of 370mJ.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 260A at 25°C case temperature and 190A at 100°C case temperature.
The drain-to-source breakdown voltage is 75V.
The typical on-resistance is 2.1mΩ, with a maximum of 2.6mΩ.
The operating junction and storage temperature range is -55°C to +175°C.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
