| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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16,788 pcs
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16788 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
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14,620 pcs
|
14620 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
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| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFS3006TRLPBF is an N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a drain-source breakdown voltage of 60V and a continuous drain current of 195A (package limited) or 270A silicon limited. The typical on-resistance is 2.0mΩ with a maximum of 2.5mΩ at 170A and 10V gate drive.
This MOSFET is designed for high efficiency synchronous rectification in switched-mode power supplies, uninterruptible power supplies, and high-speed power switching applications. It offers enhanced gate, avalanche, and dynamic dV/dt ruggedness, and is fully characterized for capacitance and avalanche SOA.
The device is housed in a D2PAK (TO-263) surface mount package with gull wing terminals, suitable for automated assembly. It is lead-free and RoHS3 compliant. The operating junction temperature range is -55°C to 175°C, with a maximum power dissipation of 375W at 25°C case temperature.
The drain-source breakdown voltage (Vdss) is 60V.
It is available in a D2PAK (TO-263-3) surface mount package.
The operating junction temperature range is -55°C to 175°C.
Yes, it is RoHS3 compliant and lead-free.
The continuous drain current is 195A (package limited) at Tc=25°C, with a silicon-limited maximum of 270A.
The maximum on-resistance is 2.5mΩ at Vgs=10V, Id=170A, with a typical value of 2.0mΩ.
The maximum gate threshold voltage is 4V at Id=250µA.