| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
55 pcs
|
55 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The IRFS3006PBF from Vishay Dale is a HEXFET® single N-channel Power MOSFET designed for high efficiency synchronous rectification in SMPS, hard switched, and high frequency circuits. It features improved gate, avalanche, and dynamic dV/dt ruggedness.
Key electrical specifications include a Drain to Source Voltage (Vds) of 60V and a Continuous Drain Current (Ids) of 270A. The on-resistance (Rds) is a low 0.002 Ohms, and the Threshold Voltage is 4V. The MOSFET has a Power Dissipation rating of 375W.
It operates within a temperature range of -55°C to 175°C. The input capacitance (Ciss) is 8970pF at 50V(Vds), with a rise time of 182ns and a fall time of 189ns. The physical material is Silicon, and it is in an Active product lifecycle status.
The IRFS3006PBF is packaged in a TO-263-3 case and uses surface mount technology. It is a lead-free component.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
60 V.
270 A.
0.002 Ω.
4 V.
375 W.
-55°C to 175°C.
TO-263-3 surface mount package.