| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,533 pcs
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13533 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Infineon IRFS23N20DTRLP is a unipolar N-channel MOSFET transistor designed for various electronic applications. It features a high drain-source voltage rating of 200V and a continuous drain current capability of 17A, with a power dissipation of 170W.
This MOSFET utilizes HEXFET® technology and has an on-state resistance of 0.1Ω. The gate-source voltage is rated at ±30V, and the gate charge is 57nC. It is housed in a D2PAK surface-mount package, making it suitable for automated assembly processes.
The IRFS23N20DTRLP is specified with a RoHS3 compliant status, MSL 1 Unlimited moisture sensitivity level, and REACH unaffected status. Its unipolar, enhancement-mode channel type and SMD mounting make it a versatile component for power switching and amplification circuits.
The drain-source voltage is 200V.
The continuous drain current is 17A.
The power dissipation is 170W.
The on-state resistance is 0.1Ω.
It is supplied in a D2PAK package.
It is designed for SMD mounting.