| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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13,533 pcs
|
13533 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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| Technology |
The Infineon IRFS23N20DPBF is a high-performance N-Channel MOSFET from the HEXFET® series. It is designed for various power switching applications, offering a robust 200V drain-to-source voltage and a continuous drain current capability of 24A at 25°C.
Key electrical characteristics include a maximum on-state resistance of 100mOhm at 14A and 10V, a gate threshold voltage of 5.5V at 250µA, and a maximum gate-source voltage of ±30V. The MOSFET also has a typical gate charge of 86 nC at 10V and an input capacitance of 1960 pF at 25V.
This component is housed in a D2PAK package, suitable for surface mounting. Its metal-oxide technology ensures efficient operation in demanding environments. The part status is listed as discontinued, indicating it may be end-of-life or have limited availability.
200V.
24A at 25°C.
100mOhm maximum at 14A, 10V.
5.5V maximum at 250µA.
86nC at 10V.
1960pF at 25V.
D2PAK.