Mfr Part #:

IRFS11N50APBF

Mfr Name: Vishay

IRFS11N50APBF is an N-Channel power MOSFET from Vishay (Vishay Siliconix) designed for high-voltage switching applications. It features a 500V drain-source voltage rating, 11A continuous drain current, and a low on-resistance of 520mΩ.

✓ Total Stock: 3,020 pcs

IRFS11N50APBF Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	3,020 pcs On Request	3020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IRFS11N50APBF Description

Short technical summary and product information.

The IRFS11N50APBF is a 500V N-Channel power MOSFET manufactured by Vishay Siliconix. It is designed for high-voltage switching applications such as Switch Mode Power Supplies (SMPS), Uninterruptible Power Supplies (UPS), and high-speed power switching.

Key electrical specifications include a drain-source voltage (VDS) of 500V, continuous drain current (ID) of 11A at 25°C case temperature, and a maximum drain-source on-resistance (RDS(on)) of 520mΩ at VGS = 10V and ID = 6.6A. The gate charge (Qg) is typically 52nC, allowing for efficient gate drive requirements. The device also features a maximum power dissipation of 170W at TC = 25°C.

The MOSFET is housed in a surface-mount D²PAK (TO-263) package, which is suitable for automated assembly processes. It is lead (Pb)-free and RoHS-compliant, as indicated by the PbF suffix in the ordering code. The operating junction temperature range is -55°C to +150°C, ensuring reliable performance in harsh environments.

Typical applications include two-transistor forward converters, half and full bridge topologies, and power factor correction boost converters in SMPS designs. The device is characterized for low gate charge and enhanced avalanche ruggedness.

IRFS11N50APBF Quick Information

Product Type: MOSFET

Canonical Name: IRFS11N50APBF N-Channel Power MOSFET

Subcategory: Single N-Channel MOSFET

IRFS11N50APBF Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Lead (Pb)-free

IRFS11N50APBF Features

N-channel MOSFET with 500V drain-source voltage.
Continuous drain current rating of 11A at 25°C.
Low on-resistance of 520mΩ at 10V gate drive.
Surface mount D²PAK (TO-263) package.
Wide operating temperature range -55°C to 150°C.

IRFS11N50APBF Applications

Switch Mode Power Supplies (SMPS) applications.
Uninterruptible Power Supply (UPS) circuits.
High-speed power switching designs.
Power Factor Correction (PFC) boost converters.

IRFS11N50APBF FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of this MOSFET?

500V

What is the continuous drain current rating?

11A at TC=25°C

What is the on-resistance?

520mΩ maximum at VGS=10V and ID=6.6A

What is the gate charge?

52 nC maximum at VGS=10V

What is the operating temperature range?

-55°C to 150°C junction temperature

What package is this MOSFET available in?

D²PAK (TO-263) surface mount package, also known as TO-263-3

Is this device RoHS compliant?

RoHS3 compliant, but the status is unverified in the database

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	11 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	52 nC
Input Capacitance (Ciss) (Max) @ Vds	1423 pF
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	170 W
Rds On (Max) @ Id, Vgs	520 mΩ
Supplier Device Package	D²PAK (TO-263)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±30 V
Vgs(th) (Max) @ Id	4 V