IRFRC20TRLPBF IRFRC20TRLPBF is an N-Channel power MOSFET from Vishay Dale with a 600V drain-source voltage rating and 2A continuous drain current. It features a low on-resistance of 4.4 Ohm and is housed in a surface-mount DPAK (TO-252) package.
Mfr Part #:

IRFRC20TRLPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
IRFRC20TRLPBF is an N-Channel power MOSFET from Vishay Dale with a 600V drain-source voltage rating and 2A continuous drain current. It features a low on-resistance of 4.4 Ohm and is housed in a surface-mount DPAK (TO-252) package.
✓ Total Stock: 4,020 pcs

IRFRC20TRLPBF Available from 1 distributor

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IRFRC20TRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFRC20TRLPBF Description

Short technical summary and product information.

The IRFRC20TRLPBF is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for fast switching and rugged performance. It offers a maximum drain-source voltage of 600V and a continuous drain current of 2A at 25°C case temperature, with a pulsed drain current capability of 8A. The device features a low on-resistance of 4.4 Ohm at 10V gate drive, ensuring efficient power handling.

 

This MOSFET is avalanche-rated, with a single pulse avalanche energy of 74 mJ and repetitive avalanche energy of 4.2 mJ, making it suitable for applications requiring robust operation under inductive loads. It also includes a dynamic dV/dt rating of 3.0 V/ns for the diode recovery, enhancing its reliability in switching circuits.

 

The IRFRC20TRLPBF is supplied in a surface-mount DPAK (TO-252) package, which is compatible with vapor phase, infrared, or wave soldering processes. It is available in tape and reel packaging for automated assembly. The device is rated for operation over a junction temperature range of -55°C to 150°C, with a maximum power dissipation of 42W at case temperature and 2.5W at ambient when mounted on a PCB.

IRFRC20TRLPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFRC20TRLPBF N-Channel Power MOSFET
Subcategory: Single MOSFET

IRFRC20TRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFRC20TRLPBF Features

  • N-Channel power MOSFET with 600V drain-source rating.
  • Continuous drain current of 2A at 25°C case temperature.
  • Low on-resistance of 4.4 Ohm at 10V gate drive.
  • Avalanche-rated with 74 mJ single pulse energy.
  • Surface-mount DPAK package for automated assembly.

IRFRC20TRLPBF Applications

  • Ideal for high-voltage DC-DC converter circuits.
  • Used in power supply switching applications.
  • Suitable for motor control and inductive load switching.
  • Applicable in lighting ballast and inverter designs.

IRFRC20TRLPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFRC20TRLPBF?

The maximum drain-source voltage (Vdss) is 600 V.

What is the continuous drain current rating at 25°C?

The continuous drain current is 2.0 A at Tc = 25°C.

What is the on-resistance of this MOSFET?

The maximum on-resistance (Rds On) is 4.4 Ohm at Id = 1.2 A and Vgs = 10 V.

What package type is the IRFRC20TRLPBF available in?

It is available in a surface-mount DPAK (TO-252) package.

What is the operating temperature range for this device?

The operating junction temperature range is -55°C to 150°C.

Is the IRFRC20TRLPBF RoHS compliant?

The part is listed as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

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