IRFRC20TRPBF
Vishay
IRFRC20TRPBF is an N-Channel 600V 2A Power MOSFET from Vishay in a DPAK surface-mount package. It features 4.4 Ohm on-resistance and 18nC gate charge.
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4,767 pcs
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4767 pcs | On Request | 1 | On Request | On Request | 9450+ | On Request | On Request |
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The IRFRC20 is a third-generation N-Channel power MOSFET from Vishay Siliconix, designed for applications requiring fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. It is rated for a drain-to-source voltage of 600V and a continuous drain current of 2A at 25°C case temperature. The maximum on-resistance is 4.4Ω at a gate drive of 10V and 1.2A drain current, with a maximum gate charge of 18nC at 10V for efficient gate drive.
This device is available in a DPAK (TO-252) surface-mount package, suitable for vapor phase, infrared, or wave soldering techniques. It supports power dissipation up to 42W at case temperature (2.5W at ambient) and operates over a junction temperature range of -55°C to 150°C. The MOSFET features a dynamic dV/dt rating and is repetitive avalanche rated, enhancing robustness in demanding switching applications.
With a maximum input capacitance of 350pF at 25V drain-source voltage and a gate threshold voltage of 4V maximum, the IRFRC20 is well-suited for power supply, motor control, and other high-voltage switching circuits. Its surface-mount DPAK package enables compact PCB layouts and ease of paralleling for higher current requirements.
The IRFRC20 has a drain-to-source voltage (Vdss) rating of 600V.
The maximum continuous drain current is 2A at a case temperature of 25°C.
The maximum on-resistance is 4.4Ω at a drain current of 1.2A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.