DistyParts Icon
IRFR9N20DTRPBF IRFR9N20DTRPBF is a 200V, 9.4A N-Channel MOSFET from Infineon with a typical on-resistance of 380mΩ. It comes in a surface-mount D-Pak package.
Mfr Part #:

IRFR9N20DTRPBF

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
IRFR9N20DTRPBF is a 200V, 9.4A N-Channel MOSFET from Infineon with a typical on-resistance of 380mΩ. It comes in a surface-mount D-Pak package.
✓ Total Stock: 135 pcs

IRFR9N20DTRPBF Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
HMB Electronics LLC ✓
Non-Authorised Inventory information
135 pcs
On Request
135 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IRFR9N20DTRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
View Similar Products (0)

IRFR9N20DTRPBF Description

Short technical summary and product information.

The IRFR9N20DTRPBF is a 200V, 9.4A N-Channel power MOSFET from Infineon Technologies, part of the HEXFET family. It features a maximum drain-source on-resistance of 380mΩ at Vgs=10V and Id=5.6A, ensuring efficient power switching. The device is designed for high-frequency DC-DC converters and typical SMPS topologies such as telecom 48V input forward converters.

 

This MOSFET provides fast switching with typical rise and fall times of 16ns and 9.3ns respectively, and a total gate charge of 18nC typical. It has a maximum power dissipation of 86W at Tc=25°C and operates over a junction temperature range of -55°C to +175°C.

 

The IRFR9N20DTRPBF is lead-free and RoHS3 compliant. It is supplied in tape and reel packaging for automated assembly. The D-Pak (TO-252) package is suitable for surface mount applications.

IRFR9N20DTRPBF Quick Information

Product Type: MOSFET
Series: HEXFET
Canonical Name: IRFR9N20DTRPBF N-Channel MOSFET
Subcategory: Single MOSFETs

IRFR9N20DTRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Lead-Free

IRFR9N20DTRPBF Features

  • 200V drain-to-source voltage rating.
  • 9.4A continuous drain current at 25°C.
  • 380mOhm maximum on-resistance at 10V.
  • Fast switching with 18nC total gate charge.
  • Surface mount D-Pak package.

IRFR9N20DTRPBF Applications

  • Ideal for high frequency DC-DC converters.
  • Used in telecom 48V input forward converters.
  • Suitable for SMPS topologies.

IRFR9N20DTRPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFR9N20DTRPBF?

200 V.

What is the continuous drain current rating at 25°C?

9.4 A.

What is the typical on-resistance?

380 mOhm maximum at Vgs=10V and Id=5.6A.

What package does the IRFR9N20DTRPBF come in?

Surface mount D-Pak (TO-252-3).

What is the operating temperature range?

-55°C to +175°C (junction).

Is the IRFR9N20DTRPBF RoHS compliant?

Yes, RoHS3 compliant (unverified).

What is the maximum power dissipation?

86 W at Tc=25°C.

Home
Account

Categories