| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,507 pcs
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1507 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay IRFR9310TRPBF is a P-Channel MOSFET featuring a 400V drain-source breakdown voltage and a continuous drain current of 1.8A at a case temperature of 25°C. It offers a power dissipation of 50W (Tc=25°C) and a low gate-source threshold voltage of 2V.
This MOSFET operates within a temperature range of -55°C to +150°C. It has a drain-source resistance of 7 Ohms and a gate charge of 13 nC. The component is manufactured using Silicon (Si) technology and is configured as a single channel enhancement mode device.
The IRFR9310TRPBF is packaged in a TO-252-3 surface mount package, supplied in cut tape. Its key electrical characteristics include a maximum gate-source voltage of 10V and a minimum forward transconductance of 0.91 S. The fall time is specified at 24 ns.
This component is suitable for various power switching applications where a P-Channel MOSFET with these specifications is required. Its surface mount package facilitates integration into compact electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 400 V.
The continuous drain current is 1.8 A.
The power dissipation is 50 W.
The gate-source threshold voltage is 2 V.
The operating temperature range is -55 C to +150 C.
This MOSFET is in a TO-252-3 surface mount package.