IRFR9220TRLPBF P-Channel MOSFET rated for 200V drain-source voltage and 3.6A continuous drain current. Surface-mount DPAK package.
Mfr Part #:

IRFR9220TRLPBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET rated for 200V drain-source voltage and 3.6A continuous drain current. Surface-mount DPAK package.
✓ Total Stock: 42,033 pcs

IRFR9220TRLPBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
30,000 pcs
30000 pcs On Request 1 On Request On Request On Request On Request 2026-02-16 21:33:16
Non-Authorised Inventory information
12,033 pcs
12033 pcs On Request 1 On Request On Request 12+ On Request On Request

IRFR9220TRLPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFR9220TRLPBF Description

Short technical summary and product information.

The IRFR9220TRLPBF is a P-Channel Power MOSFET from Vishay Siliconix, designed for high-voltage switching applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 3.6A at 25°C case temperature. The on-resistance is typically 1.5 Ohm at Vgs = -10V and Id = 2.2A.

 

This MOSFET offers fast switching with a total gate charge of 20 nC and input capacitance of 340 pF. It is rated for repetitive avalanche energy up to 4.2 mJ and single-pulse avalanche energy of 310 mJ, making it suitable for rugged environments. The device is surface-mounted in a DPAK (TO-252) package, which is compatible with vapor phase, infrared, or wave soldering.

 

Typical applications include power supply circuits, motor control, and DC-DC converters where high efficiency and thermal performance are required. The operating junction temperature range is -55°C to 150°C, with a maximum power dissipation of 42W at 25°C case temperature.

IRFR9220TRLPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFR9220TRLPBF P-Channel Power MOSFET
Subcategory: P-Channel Power MOSFET

IRFR9220TRLPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFR9220TRLPBF Features

  • P-Channel MOSFET with 200V drain-source voltage.
  • Continuous drain current of 3.6A at 25°C.
  • Low on-resistance of 1.5 Ohm maximum.
  • Surface-mount DPAK (TO-252) package.
  • Rated for repetitive avalanche up to 4.2 mJ.

IRFR9220TRLPBF Applications

  • Ideal for high-voltage DC-DC converters.
  • Used in motor control and power management.
  • Suitable for battery protection circuits.
  • Applicable in telecom and industrial power supplies.

IRFR9220TRLPBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage (Vds) of the IRFR9220TRLPBF?

The maximum drain-source voltage is 200 V.

What is the continuous drain current rating of this MOSFET?

The continuous drain current is 3.6 A at Tc=25°C.

What package is the IRFR9220TRLPBF available in?

It is available in a surface-mount DPAK (TO-252) package, also known as TO-252-3, DPak (2 Leads + Tab), SC-63.

What is the operating temperature range of this MOSFET?

The operating junction temperature range is -55°C to 150°C.

Is the IRFR9220TRLPBF RoHS compliant?

The part is marked as RoHS3 compliant, but this status is unverified and should be confirmed with the manufacturer.

What is the on-resistance (Rds(on)) of the IRFR9220TRLPBF?

The maximum on-resistance is 1.5 Ohm at Vgs = -10V and Id = 2.2A.

What is the gate charge of this MOSFET?

The total gate charge is 20 nC at Vgs = -10V, with gate-source charge of 3.3 nC and gate-drain charge of 11 nC.

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