IRFR9220PBF P-Channel Power MOSFET, 200V drain-source voltage, 3.6A continuous drain current, in DPAK surface-mount package.
Mfr Part #:

IRFR9220PBF

Available from 2 distributors
Mfr Name: Vishay
Vishay
P-Channel Power MOSFET, 200V drain-source voltage, 3.6A continuous drain current, in DPAK surface-mount package.
✓ Total Stock: 1,496 pcs

IRFR9220PBF Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,000 pcs
1000 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
496 pcs
496 pcs On Request 1 On Request On Request On Request On Request On Request

IRFR9220PBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFR9220PBF Description

Short technical summary and product information.

The IRFR9220PBF is a P-Channel Power MOSFET from Vishay Dale, designed for high-efficiency power switching applications. It features a maximum drain-source voltage of 200V and a continuous drain current of 3.6A at case temperature 25°C. The device is based on advanced Power MOSFET technology ensuring low on-resistance and fast switching.

 

Electrical characteristics include a maximum on-resistance of 1.5Ω at 2.2A drain current with 10V gate drive. The gate charge is 20nC at 10V, and input capacitance is 340pF at 25V. This MOSFET is avalanche rated, with single pulse avalanche energy of 310mJ and repetitive avalanche capability.

 

Housed in a DPAK (TO-252) surface-mount package, the device is suitable for automated assembly processes. The operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 42W at case temperature 25°C and 2.5W at ambient temperature 25°C. The package also supports tape and reel packaging for volume production.

 

The device is indicated as RoHS3 compliant and lead-free per manufacturer documentation. It is designed for high-side switching and general power management applications in a variety of electronic systems.

IRFR9220PBF Quick Information

Product Type: MOSFET
Series: IRFR9220
Canonical Name: IRFR9220PBF - 200V P-Channel MOSFET, DPAK
Subcategory: Single

IRFR9220PBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IRFR9220PBF Features

  • 200V drain-source breakdown voltage.
  • 3.6A continuous drain current.
  • Low 1.5Ω on-resistance at 10V.
  • Surface mount DPAK (TO-252) package.
  • Avalanche rated for ruggedness.

IRFR9220PBF Applications

  • Ideal for high-side switching circuits.
  • Used in DC-DC converters and power supplies.
  • Suitable for load switching applications.

IRFR9220PBF FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for this MOSFET?

200V.

What package does the IRFR9220PBF come in?

TO-252-3 (DPak, SC-63) surface mount package.

What is the operating temperature range?

-55°C to 150°C (junction).

Is the IRFR9220PBF RoHS compliant?

Yes, marked as RoHS3 compliant and lead-free.

What is the continuous drain current rating?

3.6A at case temperature 25°C.

What is the typical gate charge?

20 nC maximum at 10V gate-source voltage.

What is the maximum on-resistance?

1.5Ω at 2.2A drain current and 10V gate-source voltage.

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