| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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67 pcs
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67 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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The IRFR9220 is a P-Channel Power MOSFET manufactured by Vishay Siliconix. It features a drain-source voltage (Vdss) of -200V and a continuous drain current of 3.6A at Tc=25°C. The device has a maximum on-resistance of 1.5 Ohm at Vgs=-10V and Id=2.2A. It offers a total gate charge of 20 nC at Vgs=10V, making it suitable for fast switching applications.
This MOSFET is designed for surface-mount assembly in the DPAK (TO-252) package. It supports a maximum power dissipation of 2.5W at ambient temperature and 42W at case temperature. The operating junction temperature range is -55°C to 150°C. The device includes a single pulse avalanche energy rating of 310 mJ, indicating robust performance under inductive load switching.
Typical applications include power supply circuits, motor control, and load switching where P-Channel MOSFETs are preferred for high-side switching. The DPAK package is suitable for automated assembly processes and offers good thermal performance when mounted on appropriate PCB copper areas.
The drain-source breakdown voltage is -200V (minimum).
The operating junction temperature range is -55°C to 150°C.
The IRFR9220 is available in a DPAK (TO-252) surface-mount package.
The IRFR9220 is listed as RoHS3 compliant, but this status is unverified and of low confidence.
The maximum continuous drain current is 3.6A at Tc=25°C.
The maximum drain-source on-resistance is 1.5 Ohm at Vgs=-10V and Id=2.2A.
The maximum total gate charge is 20 nC at Vgs=10V.