| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,915 pcs
|
2915 pcs | On Request | 1 | On Request | On Request | 302A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR9120TRR is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It features a maximum drain-source voltage of 100V and a continuous drain current of 5.6A at case temperature (Tc). The device achieves a maximum on-resistance of 600mOhm when driven with a gate-source voltage of 10V and a drain current of 3.4A.
Key electrical characteristics include a typical input capacitance of 390pF at 25V drain-source and a maximum gate charge of 18nC at 10V. The gate threshold voltage is specified at a maximum of 4V with a drain current of 250µA, and the gate-source voltage is rated for ±20V maximum.
The IRFR9120TRR is housed in a surface mount D-Pak package (TO-252-3, DPak, SC-63) and supports a maximum power dissipation of 2.5W at ambient temperature and 42W at case temperature. It operates over a junction temperature range of -55°C to 150°C.
The maximum drain-source voltage (Vdss) is 100V.
The maximum continuous drain current (Id) at case temperature (Tc) is 5.6A.
The maximum on-resistance is 600mOhm at a drain current of 3.4A and gate-source voltage of 10V.
It is available in a surface mount D-Pak package (TO-252-3, DPak, SC-63).
The junction temperature range is from -55°C to 150°C.
It is listed as RoHS3 compliant, but this information is unverified from the existing database.