| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
130 pcs
|
130 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| SVHC Present | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR9120NTRPBF is a P-Channel enhancement mode MOSFET designed for high-side switching applications. It features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 6.6A at 25°C case temperature. The device offers a maximum on-resistance (Rds(on)) of 480mOhm at a gate drive of 10V and 3.9A drain current. Gate threshold voltage is 4V maximum at 250µA. Total gate charge is 27nC at 10V, and input capacitance is 350pF at 25V drain-source voltage. The MOSFET is capable of dissipating up to 40W at case temperature. It operates over a junction temperature range of -55°C to 150°C. The device is supplied in a surface mount D-Pak package (TO-252-3, DPak, SC-63) suitable for automated assembly. This component is commonly used in power management circuits, DC-DC converters, and load switching applications.
100V.
TO-252-3, DPak (2 Leads + Tab), SC-63 (D-Pak).
-55°C to 150°C (junction).
RoHS3 compliant (unverified).
27 nC at 10V.
350 pF at 25V.
±20V.