| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,441 pcs
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1441 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR9120NPBF is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 100V and a continuous drain current of 6.6A at case temperature. The device utilizes MOSFET (Metal Oxide) technology.
Key electrical characteristics include a maximum on-resistance of 480 mOhm at 3.9A and 10V gate drive, a maximum gate threshold voltage of 4V at 250µA, and a maximum gate charge of 27 nC at 10V. Input capacitance is 350 pF at 25V drain-source voltage. The device is designed for a gate drive voltage of 10V and can withstand a maximum gate-source voltage of ±20V.
The MOSFET is housed in a TO-252-3 (DPak) surface mount package with 2 leads and a tab. It supports a maximum power dissipation of 40W at case temperature and operates over a junction temperature range of -55°C to 150°C. This component is suitable for power management and switching applications requiring high efficiency and reliability.
100V maximum.
6.6A at case temperature.
480 mOhm maximum at 3.9A and 10V gate drive.
4V maximum at 250µA drain current.
-55°C to 150°C junction temperature.
TO-252-3 (DPak) surface mount.
RoHS3 Compliant (unverified).