| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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72 pcs
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72 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Termination Style | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR9120 is a P-Channel power MOSFET designed for high efficiency power management. It features a maximum drain-source voltage of -100V and continuous drain current of -5.6A at 25°C case temperature. The device offers a low on-resistance of 600mΩ at Vgs = -10V and Id = 3.4A, minimizing conduction losses.
This MOSFET is built with third generation technology providing fast switching and ruggedized performance. It is avalanche rated with single pulse avalanche energy of 210mJ and repetitive avalanche capability. The total gate charge is 18nC at Vgs = 10V, enabling efficient gate drive.
The device is available in a DPAK (TO-252) surface mount package with gull wing leads, suitable for automated assembly. It supports operating junction temperatures from -55°C to 150°C. Power dissipation is 42W at case temperature 25°C and 2.5W when mounted on a PCB.
Typical applications include power supply circuits, DC-DC converters, and load switching in automotive and industrial systems. The part is available in tape and reel packaging for volume production.
The maximum drain-source voltage (Vdss) is -100 V.
The continuous drain current is -5.6 A at Tc = 25°C.
The maximum drain-source on-resistance (Rds on) is 600 mΩ at Id = 3.4 A and Vgs = 10 V.
The maximum gate threshold voltage (Vgs(th)) is 4 V at Id = 250 µA.
The maximum total gate charge (Qg) is 18 nC at Vgs = 10 V.