IRFR9110TRPBF P-Channel power MOSFET with 100V drain-source voltage and 3.1A continuous drain current. Surface-mount DPAK package.
Mfr Part #:

IRFR9110TRPBF

Available from 1 distributors
Mfr Name: Vishay
Vishay
P-Channel power MOSFET with 100V drain-source voltage and 3.1A continuous drain current. Surface-mount DPAK package.
✓ Total Stock: 15,020 pcs

IRFR9110TRPBF Available from 1 distributor

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✓ Non-Authorised
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15,020 pcs
15020 pcs On Request 1 On Request On Request On Request On Request On Request

IRFR9110TRPBF Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IRFR9110TRPBF Description

Short technical summary and product information.

The IRFR9110TRPBF is a P-Channel power MOSFET from Vishay Dale, designed for medium-voltage switching applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 3.1A at 25°C case temperature. The device offers a maximum on-resistance of 1.2 Ohms at 10V gate drive, ensuring efficient power handling.

 

This MOSFET is built with third-generation power MOSFET technology, providing fast switching and ruggedized device design. It includes repetitive avalanche rating and dynamic dV/dt capability, with a single pulse avalanche energy rating of 140 mJ. The gate charge is 8.7 nC, and input capacitance is 200 pF, supporting moderate-speed switching applications.

 

The device is housed in a surface-mount DPAK (TO-252) package, suitable for automated assembly processes. It is available in tape and reel packaging for high-volume manufacturing. The operating junction temperature range is -55°C to 150°C, with maximum power dissipation of 25W at case temperature 25°C.

IRFR9110TRPBF Quick Information

Product Type: Power MOSFET
Canonical Name: IRFR9110TRPBF P-Channel Power MOSFET
Subcategory: Single MOSFET

IRFR9110TRPBF Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IRFR9110TRPBF Features

  • P-Channel MOSFET for high-side switching.
  • 100V maximum drain-source voltage rating.
  • 3.1A continuous drain current at 25°C.
  • 1.2 Ohm maximum on-resistance at 10V gate drive.
  • Surface-mount DPAK package for automated assembly.

IRFR9110TRPBF Applications

  • Used in power management and DC-DC converters.
  • Suitable for load switching and battery protection.
  • Ideal for motor control and actuator drivers.
  • Applied in automotive and industrial systems.

IRFR9110TRPBF FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IRFR9110TRPBF?

The maximum drain-source voltage (Vds) is 100V.

What is the continuous drain current rating?

The continuous drain current (Id) is 3.1A at Tc = 25°C and 2.0A at Tc = 100°C.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance (Rds(on)) is 1.2 Ohms at Id = 1.9A and Vgs = 10V.

What package type is the IRFR9110TRPBF available in?

It is available in a surface-mount TO-252-3 (DPAK) package.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

Is the IRFR9110TRPBF RoHS compliant?

It is listed as RoHS3 compliant, though this is unverified.

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