| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR9110TRLPBF is a P-Channel enhancement-mode power MOSFET from Vishay Siliconix, part of the third-generation Power MOSFET family. It is designed for fast switching applications and offers a rugged device design with low on-resistance.
Key electrical specifications include a maximum drain-to-source voltage of 100V, continuous drain current of 3.1A at 25°C case temperature, and a maximum on-resistance of 1.2Ω at 1.9A drain current and 10V gate drive. The device features a total gate charge of 8.7nC at 10V, with typical gate-to-source charge of 2.2nC and gate-to-drain charge of 4.1nC. Input capacitance is 200pF at 25V drain-source voltage.
The MOSFET is housed in a surface-mount DPAK (TO-252) package with a D-Pak supplier device package designation. It supports a maximum power dissipation of 25W at 25°C case temperature and 2.5W at 25°C ambient temperature when mounted on a PCB. The operating junction temperature range is -55°C to 150°C.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum continuous drain current is 3.1A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 1.2Ω at 1.9A drain current and 10V gate drive.
It is available in a surface mount DPAK (TO-252) package with a D-Pak supplier device package.
The operating junction temperature range is -55°C to 150°C.
RoHS3 compliance is indicated but unverified.
The maximum total gate charge (Qg) is 8.7nC at 10V gate voltage.