| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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21,020 pcs
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21020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR9024TRPBF-BE3 is a P-Channel enhancement-mode MOSFET from Vishay Dale. It features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 8.8A at case temperature. The device offers a maximum on-resistance of 280mOhm at 5.3A and 10V gate drive.
This MOSFET uses standard gate drive voltages with a maximum gate threshold voltage of 4V at 250µA drain current. It has a maximum gate charge of 19nC at 10V and an input capacitance of 570pF at 25V drain-source voltage. The device is designed for surface mount assembly in a TO-252-3 (DPak) package.
The operating junction temperature range is -55°C to 150°C. Maximum power dissipation is 2.5W at ambient temperature and 42W at case temperature.
The maximum drain-to-source voltage (Vdss) is 60V.
The continuous drain current (Id) is 8.8A at case temperature (Tc).
The operating junction temperature range is -55°C to 150°C.
It is available in a TO-252-3 (DPak) surface mount package.
The maximum on-resistance (Rds On) is 280mOhm at 5.3A drain current and 10V gate-source voltage.
The part is listed as RoHS3 compliant, though this status is unverified.