IRFH8318TRPBF
Infineon
The Infineon IRFH8318TRPBF is an N-channel Power MOSFET designed for high frequency buck converters. It features a 30V drain-to-source voltage and a PQFN 5x6mm package.
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339 pcs
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339 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Siliconix IRFR9024PBF is a P-Channel Power MOSFET designed for applications requiring fast switching and rugged performance. It offers a drain-source voltage (Vds) of 60V and a maximum continuous drain current (Id) of 8.8A at 25°C.
This MOSFET boasts a low on-resistance (Rds(on)) of 0.28 Ohms at a gate-source voltage (Vgs) of -10V, contributing to efficient power delivery and reduced heat generation. The device features a maximum power dissipation of 42W at 25°C case temperature.
Packaged in a DPAK (TO-252) surface-mount case, the IRFR9024PBF is suitable for automated assembly processes. It is also available in tape and reel for high-volume production. The operating junction temperature range is -55°C to +150°C.
Key electrical parameters include a gate charge (Qg) of 19nC (max), gate-source charge (Qgs) of 5.4nC (typical), and gate-drain charge (Qgd) of 11nC (typical). The device is designed with a dynamic dV/dt rating and is repetitive avalanche rated.
| Qty | Low | High |
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| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 60V.
The maximum continuous drain current (Id) is 8.8A at 25°C.
The on-resistance (Rds(on)) is 0.28 Ohms at VGS = -10V.
The IRFR9024PBF is available in a DPAK (TO-252) package suitable for surface mounting.
The operating junction and storage temperature range is -55°C to +150°C.