| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
15 pcs
|
15 pcs | On Request | 1 | On Request | On Request | 20+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR9024NTRPBF is a P-Channel enhancement mode MOSFET manufactured by Infineon Technologies. It is designed for medium-power switching applications requiring a P-Channel device.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 55V and a continuous drain current (Id) of 11A at 25°C case temperature. The maximum on-state resistance (Rds on) is 175mOhm at a gate drive of 10V and 6.6A drain current. The device has a maximum gate threshold voltage (Vgs(th)) of 4V at 250µA drain current.
The MOSFET is housed in a surface-mount TO-252-3 (DPak) package, also known as SC-63, with the supplier device package designated as D-Pak. It is rated for a maximum power dissipation of 38W at 25°C case temperature and can operate over a junction temperature range of -55°C to 150°C.
The maximum drain-to-source voltage (Vdss) is 55V.
The continuous drain current (Id) is 11A at a case temperature of 25°C.
The maximum on-state resistance is 175mOhm at a drain current of 6.6A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface mount TO-252-3 (DPak) package, also known as SC-63.
The part is listed as RoHS3 Compliant, though this information is unverified.