| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
37,020 pcs
|
37020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR9024NTRLPBF is a P-Channel enhancement-mode MOSFET manufactured by Infineon Technologies using MOSFET (Metal Oxide) technology. It is designed for a wide range of power management and switching applications.
Key electrical specifications include a minimum drain-to-source breakdown voltage of 55 V and a maximum continuous drain current of 11 A at case temperature (Tc). The device features a maximum on-resistance of 175 mOhm at a gate-source voltage of 10 V and a drain current of 6.6 A. The maximum gate threshold voltage is 4 V at a drain current of 250 µA.
For switching performance, the total gate charge is 19 nC at a gate-source voltage of 10 V, and the input capacitance is 350 pF at a drain-source voltage of 25 V. The device can dissipate up to 38 W at case temperature and operates over a junction temperature range of -55°C to 150°C.
The IRFR9024NTRLPBF is offered in a surface-mount TO-252-3 package, also known as D-Pak (2 Leads + Tab) or SC-63. The supplier device package is D-Pak.
The minimum drain-source breakdown voltage is 55 V.
The maximum continuous drain current is 11 A at case temperature (Tc).
The maximum on-resistance is 175 mOhm at a drain current of 6.6 A and gate-source voltage of 10 V.
The operating junction temperature range is -55°C to 150°C.
It is available in a surface-mount TO-252-3 (D-Pak) package.
The maximum gate threshold voltage is 4 V at a drain current of 250 µA.
The maximum power dissipation is 38 W at case temperature (Tc).