| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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700 pcs
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700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR9010TRPBF is a P-Channel power MOSFET from Vishay Dale, designed for a variety of power management applications. It offers a maximum drain-source voltage of 50V and a continuous drain current of 5.3A at a case temperature of 25°C. The device features a low on-resistance of 500mOhm maximum at Vgs=10V, ensuring efficient power handling.
Electrical characteristics include a gate charge of 9.1nC at Vgs=10V, input capacitance of 240pF at Vds=25V, and single-pulse avalanche energy rating of 136mJ. The MOSFET is built using advanced power MOSFET technology, providing fast switching and ease of paralleling.
The device is packaged in a surface-mount D-Pak (TO-252) package, suitable for automated assembly. It operates over a junction temperature range of -55°C to 150°C and is rated for maximum power dissipation of 25W at Tc=25°C.
Typical applications include computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products.
The maximum drain-source voltage (Vdss) is 50V.
The continuous drain current is 5.3A at Tc=25°C and 3.3A at Tc=100°C.
The maximum drain-source on-resistance is 500mOhm at Vgs=10V and Id=2.8A.
It is available in a surface mount D-Pak (TO-252) package, also known as DPak or SC-63.
The operating junction temperature range is -55°C to 150°C.
It is listed as RoHS3 compliant, but this is unverified and considered low confidence.