| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,020 pcs
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3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2,597 pcs
|
2597 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | 2325 | On Request | On Request |
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The IRFR7446TRPBF is an N-Channel power MOSFET from Infineon Technologies, fabricated with HEXFET technology. It features a drain-to-source breakdown voltage of 40V and a package-limited continuous drain current of 56A (silicon limited to 120A). The typical on-resistance is 3.0 mOhm at a 10V gate drive, with a maximum of 3.9 mOhm at 56A and 10V. The device offers a maximum gate charge of 130 nC at 10V and an input capacitance of 3150 pF at 25V drain-source.
Thermal characteristics include a maximum power dissipation of 98W at case temperature and an operating junction temperature range from -55°C to 175°C. The MOSFET is housed in a TO-252-3 (DPak) surface mount package and is supplied in tape and reel packaging with 2000 units per reel. The part is lead-free per the datasheet.
This MOSFET is suitable for a variety of power conversion and motor drive applications including brushed and BLDC motor drives, PWM inverterized topologies, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, as well as DC/DC and AC/DC converters.
40V.
TO-252-3 (DPak) surface mount package.
-55°C to 175°C (junction).
Listed as RoHS3 compliant in database; however, this has not been independently verified from the datasheet. The datasheet confirms lead-free compliance.
Package limited: 56A; silicon limited: 120A.
3.0 mOhm typical at 10V gate drive, maximum 3.9 mOhm at 56A and 10V.
Maximum 130 nC at 10V gate-source voltage.