| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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7,020 pcs
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7020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR6215TRLPBF is a P-Channel Power MOSFET manufactured by Infineon Technologies, part of the HEXFET series. It features a drain-source voltage (Vdss) of -150V and a continuous drain current of -13A at 25°C. The device utilizes advanced process technology to achieve low on-resistance and fast switching performance.
Key electrical parameters include a maximum on-resistance (Rds(on)) of 295 mΩ at Vgs=-10V and Id=-6.6A, gate threshold voltage of 4V at 250µA, and a maximum gate charge of 66 nC. The device is fully avalanche rated and can handle pulsed drain currents up to -44A.
The MOSFET is available in a D-Pak (TO-252) surface mount package, with a standard tape and reel packaging quantity of 3000 pieces. Thermal resistance from junction to case is 1.4°C/W and from junction to ambient is 110°C/W. Maximum power dissipation is 110W at 25°C case temperature.
This component is suitable for high-efficiency power management, DC-DC converters, and motor control applications where P-Channel MOSFETs are preferred for high-side switching. The lead-free (PbF) construction meets environmental requirements.
The maximum drain-source voltage (Vdss) is -150V.
It is available in a D-Pak (TO-252) surface mount package.
The junction temperature range is -55°C to 175°C.
The datasheet confirms lead-free (PbF) construction. RoHS compliance status is unverified.
At 25°C, it is -13A; at 100°C, it is -9A.
The maximum on-resistance is 295 mΩ at Vgs=-10V and Id=-6.6A.
The maximum gate threshold voltage is 4V at Id=250µA.