| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
44 pcs
|
44 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Technology |
The IRFR5505 is a P-Channel MOSFET manufactured by IR, housed in a surface-mount D-Pak package. This component is suitable for various electronic applications requiring efficient power switching.
Key electrical specifications include a maximum drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 18A at 25°C. The on-resistance (Rds On) is rated at a maximum of 110 mOhm at 9.6A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is a maximum of 4V at 250µA.
With a maximum power dissipation of 57W (Tc), the IRFR5505 operates within a temperature range of -55°C to 150°C. The device utilizes MOSFET (Metal Oxide) technology and belongs to the HEXFET® series.
Packaged in a TO-252-3, DPak (2 Leads + Tab), SC-63 case, it is designed for surface mounting. The component has a gate-to-source voltage (Vgs) tolerance of ±20V and a gate charge (Qg) of 32nC at 10V. Input capacitance (Ciss) is 650pF at 25V.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the IRFR5505 is 55V.
The continuous drain current (Id) for the IRFR5505 at 25°C is 18A.
The maximum on-resistance (Rds On) for the IRFR5505 is 110 mOhm at 9.6A drain current and 10V gate-source voltage.
The operating temperature range for the IRFR5505 is -55°C to 150°C.
The IRFR5505 is supplied in a TO-252-3, DPak (2 Leads + Tab), SC-63 package.
The IRFR5505 is designed for surface mounting.