| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
40 pcs
|
40 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
20 pcs
|
20 pcs | On Request | 1 | On Request | On Request | NO DC | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IRFR5410TRPBF is a P-Channel enhancement-mode MOSFET manufactured by Infineon Technologies. It is designed for power switching applications requiring high-voltage and moderate-current handling in a compact surface-mount package.
Key electrical specifications include a maximum drain-to-source voltage of 100V and a maximum drain current of 13A at case temperature (Tc). The maximum on-resistance is 205mOhm at a drain current of 7.8A and gate-source voltage of 10V. The device features a maximum gate charge of 58nC at 10V and a maximum input capacitance of 760pF at 25V drain-source voltage.
The MOSFET has a maximum gate threshold voltage of 4V at 250µA drain current and supports a gate-source voltage range of ±20V. Maximum power dissipation is 66W at case temperature, and the operating junction temperature range is -55°C to 150°C.
Packaged in a TO-252-3 (DPak) surface-mount package with supplier device package designation D-Pak, this component is suitable for automated assembly in power management, load switching, and DC-DC conversion circuits.
The maximum drain-to-source voltage (Vdss) is 100V.
The maximum drain current is 13A at case temperature (Tc).
The maximum on-resistance (Rds on) is 205mOhm at a drain current of 7.8A and gate-source voltage of 10V.
The operating junction temperature range is -55°C to 150°C.
The IRFR5410TRPBF is available in a TO-252-3 (DPak) surface-mount package with supplier device package D-Pak.
The maximum gate-source voltage (Vgs) is ±20V.
The maximum power dissipation is 66W at case temperature (Tc).