| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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640 pcs
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640 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR5410PBF is a P-Channel MOSFET from Infineon Technologies designed for power management applications. It features a maximum drain-source voltage of 100V and a continuous drain current of 13A at case temperature. The on-resistance is typically 205 milliohms at 7.8A drain current and 10V gate drive.
This MOSFET offers a gate threshold voltage of 4V and a total gate charge of 58 nC at 10V, enabling efficient switching. Input capacitance is 760 pF at 25V drain-source voltage. Maximum power dissipation is 66W at case temperature. The device operates over a junction temperature range of -55°C to 150°C.
The IRFR5410PBF is supplied in a surface mount DPAK package (TO-252-3, DPak, SC-63). It is suitable for automated assembly and space-constrained designs.
100V.
TO-252-3, DPak (2 Leads + Tab), SC-63 surface mount package.
-55°C to 150°C (junction).
RoHS3 compliant (unverified).