| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9 pcs
|
9 pcs | On Request | 1 | On Request | On Request | 1339 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Vishay IRFR540ZPBF is a HEXFET Power MOSFET designed for efficiency and reliability. It features advanced process technology for extremely low on-resistance per silicon area, with a typical RDS(on) of 22.5mΩ and a maximum of 28.5mΩ at a gate-to-source voltage of 10V.
This MOSFET has a drain-to-source breakdown voltage of 100V and can handle a continuous drain current of 35A at 25°C case temperature, and 25A at 100°C. It is rated for a junction operating temperature range of -55°C to +175°C, making it suitable for demanding applications. The device also boasts fast switching speeds with typical rise and fall times of 42ns and 34ns, respectively.
Available in D-Pak and I-Pak packages, the IRFR540ZPBF is designed for surface mounting. Its features include lead-free and halogen-free compliance, making it a versatile choice for various electronic designs requiring a robust and efficient power MOSFET.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source breakdown voltage is 100V.
The continuous drain current at a case temperature of 25°C is 35A.
The typical static drain-to-source on-resistance is 22.5mΩ.
The maximum operating junction temperature is 175°C.
The IRFR540ZPBF is available in D-Pak and I-Pak packages.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.