| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,080 pcs
|
10080 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Power Dissipation |
The IRFR540ZPBF from VBsemi is a HEXFET Power MOSFET built using advanced processing technology for extremely low on-resistance per silicon area. This device features a 100V drain-to-source breakdown voltage and a typical static drain-to-source on-resistance of 22.5mΩ at 25°C. It is designed for high efficiency with fast switching speeds and an operating junction temperature up to 175°C.
Key electrical characteristics include a gate threshold voltage between 2V and 4V, and a continuous drain current of 35A at 25°C. The MOSFET supports repetitive avalanche energy and is available in D-Pak and I-Pak packages, suitable for various mounting applications.
This power MOSFET is suitable for a wide variety of applications requiring efficient power handling and fast response times. Its robust design and high operating temperature capability make it a reliable choice for demanding electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source breakdown voltage is 100V.
The gate threshold voltage ranges from 2V to 4V.
The device is available in D-Pak and I-Pak packages.
The maximum operating temperature is 175°C.
Yes, it is RoHS3 compliant.
The typical static drain-to-source on-resistance is 22.5 milliohms at VGS of 10V.