| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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82,020 pcs
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82020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The IRFR5305TRLPBF is a P-Channel enhancement mode MOSFET from Infineon Technologies, part of the fifth generation HEXFET family. It features a drain-source voltage of -55V and a continuous drain current of -31A at 25°C case temperature. The device offers a maximum on-resistance of 65mΩ at Vgs=-10V and Id=-16A, enabling efficient power switching.
This MOSFET is fully avalanche rated with a single pulse avalanche energy of 280mJ and repetitive avalanche energy of 11mJ. It provides fast switching performance with an input capacitance of 1200pF and a total gate charge of 63nC. The operating junction temperature range spans from -55°C to 175°C.
The device is housed in a D-Pak (TO-252) surface mount package, designed for automated assembly processes. It is lead-free and RoHS3 compliant. Typical applications include power management, DC-DC converters, and load switching in automotive and industrial systems.
The drain-source voltage (Vdss) is -55V.
The maximum continuous drain current is -31A at Tc=25°C with Vgs=-10V, and -22A at Tc=100°C.
The maximum drain-source on-resistance is 65mΩ at Vgs=-10V and Id=-16A.
It comes in a D-Pak (TO-252-3) surface mount package.
The operating junction temperature range is -55°C to 175°C.
Yes, it is listed as RoHS3 compliant and lead-free.